polysilicon-gate process

См. также в других словарях:

• polysilicon-gate MOS process — MOP darinių su polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. polysilicon gate MOS process vok. Polysiliziumgate MOS Technologie, f rus. технология МОП структур с поликристаллическими… …   Radioelektronikos terminų žodynas

• double polysilicon gate MOS process — MOP darinių su dvipakopėmis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. double polysilicon gate MOS process vok. Doppel Poly Si Gate MOS Technik, f rus. технология МОП структур с… …   Radioelektronikos terminų žodynas

• self-aligned polysilicon-gate MOS process — MOP darinių su susitapatinančiomis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. self aligned polysilicon gate MOS process vok. selbstjustierende MOS Polysiliziumtechnik, f rus. технология… …   Radioelektronikos terminų žodynas

• Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… …   Wikipedia

• Floating-gate transistor — The floating gate transistor is a kind of transistor that is commonly used for non volatile storage such as flash, EPROM and EEPROM memory. Floating gate transistors are almost always floating gate MOSFETs.Floating gate MOSFETs are useful because …   Wikipedia

• Floating Gate MOSFET — The Floating Gate MOSFET (FGMOS) is a field effect transistor, whose structure is similar to a conventional MOSFET. The gate of the FGMOS is electrically isolated, creating a floating node in DC, and a number of secondary gates or inputs are… …   Wikipedia

• Doppel-Poly-Si-Gate-MOS-Technik — MOP darinių su dvipakopėmis polikristalinio silicio užtūromis technologija statusas T sritis radioelektronika atitikmenys: angl. double polysilicon gate MOS process vok. Doppel Poly Si Gate MOS Technik, f rus. технология МОП структур с… …   Radioelektronikos terminų žodynas

• Polycrystalline silicon — Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. It differs from single crystal silicon, used for electronics and solar cells, and from amorphous silicon, used for thin film devices and solar… …   Wikipedia

• Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed …   Wikipedia

• Polycide — is a silicide formed over polysilicon. Widely used in DRAMs. In a polycide MOS transistor process, the silicide is formed only over the polysilicon film as formation occurs prior to any polysilicon etch. Polycide processes contrast with salicide… …   Wikipedia

• Programmable read-only memory — D23128C PROM on the board of ZX Spectrum Computer memory types Volatile RAM DRAM (e.g., DD …   Wikipedia